TWO-DIMENSIONAL ANALYSIS OF THE SURFACE RECOMBINATION EFFECT ON CURRENT GAIN FOR GAALAS GAAS HBTS

被引：38

作者：

HIRAOKA, YS

YOSHIDA, J

机构：

[1] Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

FERMI LEVEL PINNING - HETEROJUNCTION BIPOLAR TRANSISTORS (HBT) - SURFACE RECOMBINATION EFFECT - TWO-DIMENSIONAL NUMERICAL MODEL;

D O I：

10.1109/16.3336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：857 / 862

页数：6

共 12 条

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