LOW-PRESSURE GROWTH OF ZNTE BY AR LASER-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY

被引：18

作者：

OGAWA, H

NISHIO, M

IKEJIRI, M

TUBOI, H

机构：

[1] Department of Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Ar laser irradiation upon ZnTe homoepitaxial growth has been investigated in low-pressure metalorganic vapor phase epitaxy. Dimethylzinc and diethyltelluride were used as source materials. The growth rate of the ZnTe layer was greatly enhanced by irradiating vertically onto the (100) substrate. Photoluminescence measurements revealed that the quality of the layer is improved by the irradiation. Diethyltelluride is effectively decomposed on the surface by the irradiation.

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页码：2384 / 2386

页数：3

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