HOMOEPITAXIAL GROWTH OF ZNTE BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引：11

作者：

OGAWA, H

NISHIO, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.342007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6750 / 6753

页数：4

共 20 条

[1] THE GROWTH AND CHARACTERIZATION OF HGTE EPITAXIAL LAYERS MADE BY ORGANOMETALLIC EPITAXY [J].

BHAT, I ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :1923-1926

[2] NATURE OF PREDOMINANT ACCEPTORS IN HIGH-QUALITY ZINC TELLURIDE [J].

DEAN, PJ ;

VENGHAUS, H ;

PFISTER, JC ;

SCHAUB, B ;

MARINE, J .

JOURNAL OF LUMINESCENCE, 1978, 16 (04) :363-394

[3] ELECTRICAL PROPERTIES AND INJECTION LUMINESCENCE IN ZNSE-ZNTE HETEROJUNCTIONS PREPARED BY LIQUID-PHASE EPITAXY [J].

FUJITA, S ;

ARAI, S ;

ITOH, F ;

SAKAGUCHI, T .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3070-3075

[4]

KAHEHI M, 1981, JPN J APPL PHYS, V20, P429

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J].

KITAGAWA, F ;

MISHIMA, T ;

TAKAHASHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :937-943

[6] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :644-+

[7] SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J].

MANDEL, G .

PHYSICAL REVIEW, 1964, 134 (4A) :1073-+

[8]

MATUMOTO T, 1984, J CRYST GROWTH, V67, P135

[9] GROWTH-KINETICS IN THE MOVPE OF ZNSE ON GAAS USING ZINC AND SELENIUM ALKYLS [J].

MITSUHASHI, H ;

MITSUISHI, I ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :219-222

[10] RECENT DEVELOPMENTS IN THE MOVPE OF II-VI-COMPOUNDS [J].

MULLIN, JB ;

IRVINE, SJC ;

GIESS, J ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :1-12

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