ELEMENTS OF SEMICONDUCTOR-DEVICE RELIABILITY

被引：11

作者：

PEATTIE, CG ^{[1
]}

ADAMS, JD ^{[1
]}

CARRELL, SL ^{[1
]}

GEORGE, TD ^{[1
]}

VALEK, MH ^{[1
]}

机构：

[1] TEXAS INSTR INC, SEMICOND GRP, DALLAS, TX 75222 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 02期

关键词：

D O I：

10.1109/PROC.1974.9406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：149 / 168

页数：20

共 112 条

[1]

ADOLPHSEN JW, 1970, NBS337 SPEC PUBL, P384

[2]

ADOLPHSEN JW, 1970, 8 ANN P REL PHYS, P238

[3] COATING, MECHANICAL CONSTRAINTS, AND PRESSURE EFFECTS ON ELECTROMIGRATION [J].

AINSLIE, NG ;

WELLS, OC ;

DHEURLE, FM .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :173-&

[4]

ALTER MJ, 1971, 9 ANN P REL PHYS, P149

[5] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].

AMES, I ;

DHEURLE, FM ;

HORSTMANN, RE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+

[6]

[Anonymous], 1968, PROBABILISTIC RELIAB

[7]

ANSTEAD RJ, 1967, 6 P ANN REL PHYS S L, P127

[8]

ARLT M, 1970, 8 ANN P REL PHYS, P298

[9]

ATARDO MJ, 1970, 8 ANN P REL PHYS, P115

[10] ANALYSIS OF CHEMICAL AND METALLURGICAL CHANGES IN MICROCIRCUIT METALIZATION SYSTEMS [J].

BART, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :351-&

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