XPS STUDY OF LASER-ANNEALED ION-IMPLANTED GAAS

Data on the effects of 140 keV Zn+ implanation of (100)GaAs and the consequent low-power pulsed laser annealing (LPPLA) on the composition of the surface layers are presented. The implantation dose was 10(14) cm(-2) and the sample temperature was kept at 110 +/- 10 OC. The LPPLA was carried out by 10-30 pulses of a Q-switched ruby laser (lambda = 694.3 nm, tau = 25 ns and P-0 = 4-6 MW cm(-2)) equipped with a spatial homogenizer. The crystal surface was studied by XPS analysis combined with depth profiling with the use of 1 keV Ar+. The results presented include the depth redistribution of oxygen and the As/Ga ratio as well as the oxide thickness for (a) virgin, (b) as-implanted and (c) implanted and then annealed samples.