TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE ORDERED STRUCTURE IN GAINP/GAAS EPITAXIALLY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：58

作者：

MORITA, E

IKEDA, M

KUMAGAI, O

KANEKO, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2164 / 2166

页数：3

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[1] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
BELLON, P
CHEVALIER, JP
MARTIN, GP
DUPONTNIVET, E
THIEBAUT, C
ANDRE, JP
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 567 - 569
[2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[3] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 291 - 296
[4] ATOMIC-STRUCTURE OF ORDERED INGAP CRYSTALS GROWN ON (001)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UEDA, O
TAKIKAWA, M
KOMENO, J
UMEBU, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1824 - L1827