A LATERALLY TUNABLE QUANTUM-DOT TRANSISTOR

被引：5

作者：

CHANG, H

GRUNDBACHER, R

JOVANOVIC, D

LEBURTON, JP

ADESIDA, I

机构：

[1] Materials Research Laboratory, Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana-Champaign

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A laterally tunable quantum dot transistor has been fabricated on a modulation-doped AlGaAs/GaAs heterostructure. The transistor consists of a singly gated quantum wire in which a quantum dot region is locally formed beneath the gate under the influence of an applied potential. Quantum confinement in this device is realized through structural and electrostatic means. The discrete energy levels in the quantum dot are tunable using the single gate control and the transport path is through a 1D-0D-ID constriction in the device. Reproducible resonant conductance peaks resulting from resonant transmission of electrons through zero-dimensional states from and to adjacent quantum wires are observed at 4.2 K.

引用

页码：3209 / 3211

页数：3

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