EXPERIMENTAL-EVIDENCE OF BOTH INTERSTITIAL-ASSISTED AND VACANCY-ASSISTED DIFFUSION OF GE IN SI

[11] DIFFUSION OF GERMANIUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1409 - 1410

[12] EFFECT OF SI AND SIO2 THERMAL NITRIDATION ON IMPURITY DIFFUSION AND OXIDATION INDUCED STACKING-FAULT SIZE IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3860 - 3866

[13] Nowick, 1984, DIFFUSION CRYSTALLIN, P64

[14] SEEGER S, 1969, PHYS STATUS SOLIDI, V29, P455

[15] Stolwijk N. A., 1985, Thirteenth International Conference on Defects in Semiconductors, P285

[11] DIFFUSION OF GERMANIUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1409 - 1410

[12] EFFECT OF SI AND SIO2 THERMAL NITRIDATION ON IMPURITY DIFFUSION AND OXIDATION INDUCED STACKING-FAULT SIZE IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3860 - 3866

[13] Nowick, 1984, DIFFUSION CRYSTALLIN, P64

[14] SEEGER S, 1969, PHYS STATUS SOLIDI, V29, P455

[15] Stolwijk N. A., 1985, Thirteenth International Conference on Defects in Semiconductors, P285