SWITCHING CHARACTERISTICS OF NON-LINEAR FIELD-EFFECT TRANSISTORS - GALLIUM-ARSENIDE VERSUS SILICON

被引：7

作者：

GRUBIN, HL

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 05期

关键词：

D O I：

10.1109/TMTT.1980.1130098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：442 / 448

页数：7

共 10 条

[1] GUNN EFFECT [J].

BUTCHER, PM .

REPORTS ON PROGRESS IN PHYSICS, 1967, 30 :97-+

[2] THE FIELD EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189

[3]

GREILING PT, COMMUNICATION

[4] SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

GRUBIN, HL ;

FERRY, DK ;

GLEASON, KR .

SOLID-STATE ELECTRONICS, 1980, 23 (02) :157-172

[5] HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS [J].

GRUBIN, HL ;

MCHUGH, TM .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :69-73

[6]

GRUBIN HL, 1977, 6TH P BIENN CORN EL, P399

[7]

JACABONI C, 1977, SOLID STATE ELECTRON, V20, P77

[8] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :95-&

[9] THEORY OF GUNN EFFECT [J].

KNIGHT, BW ;

PETERSON, GA .

PHYSICAL REVIEW, 1967, 155 (02) :393-+

[10] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

← 1 →