OBSERVATION OF AN ORDERED STRUCTURE IN THE INITIAL-STAGE OF GE/SI HETEROEPITAXIAL GROWTH

被引：23

作者：

OHSHIMA, N

KOIDE, Y

ITOH, K

ZAIMA, S

YASUDA, Y

机构：

[1] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-01, Furo-cho

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期

关键词：

D O I：

10.1063/1.103868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ordered structure with the double periodicity in a 〈111〉 direction has been found by in situ reflection high-energy electron diffraction observation in the initial stage of Ge films grown on (100)Si and (811)Si substrate surfaces by GeH4 gas source molecular beam epitaxy. The ordered structure is formed on {111} planes parallel to the side planes of 〈011〉 steps on {811} facets of Ge growing islands on both substrates. The formation is observed at substrate temperatures of 300-700°C and is considered to result from solid phase reactions at the interfaces during growth.

引用

页码：2434 / 2436

页数：3

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