DC AND RF PERFORMANCE OF GAAS-MESFET FABRICATED ON SILICON SUBSTRATE USING EPITAXIAL LIFT-OFF TECHNIQUE

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS= 130mA/mm, gm=135mS/mm and for 1.3μm gate length unity current gain cut-off frequency fTof 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.