DC AND RF PERFORMANCE OF GAAS-MESFET FABRICATED ON SILICON SUBSTRATE USING EPITAXIAL LIFT-OFF TECHNIQUE

被引:14
作者
SHAH, DM [1 ]
CHAN, WK [1 ]
GMITTER, TJ [1 ]
FLOREZ, LT [1 ]
SCHUMACHER, H [1 ]
VANDERGAAG, BP [1 ]
机构
[1] BELLCORE,RED BANK,NJ 07701
关键词
Galliumarsenide; Semiconductor devices and materials; Silicon;
D O I
10.1049/el:19901199
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS= 130mA/mm, gm=135mS/mm and for 1.3μm gate length unity current gain cut-off frequency fTof 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1865 / 1866
页数:2
相关论文
共 8 条
  • [1] CHAN WK, 1990, 12 SOTAPOCS EL SOC P
  • [2] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)
    FISCHER, R
    NEUMAN, D
    ZABEL, H
    MORKOC, H
    CHOI, C
    OTSUKA, N
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225
  • [3] GORONKIN H, 1983, P IEEE CORNELL C HIG, P26
  • [4] FULL FUNCTIONALITY OF LSI GATE ARRAYS FABRICATED ON 3-IN-DIAMETER, MOCVD-GROWN GAAS-ON-SILICON SUBSTRATES
    ITO, C
    MCINTYRE, D
    WHITE, T
    FENG, M
    SCHOENDUBE, R
    KALISKI, R
    KIM, HB
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 371 - 373
  • [5] MYERS DR, 1988, P INT ELECTRON DEVIC, P704
  • [6] MONOLITHIC PROCESS FOR CO-INTEGRATION OF GAAS-MESFET AND SILICON CMOS DEVICES AND CIRCUITS
    SHICHIJO, H
    MATYI, R
    TADDIKEN, AH
    KAO, YC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 548 - 555
  • [7] MESFET LIFT-OFF FROM GAAS SUBSTRATE TO GLASS HOST
    VANHOOF, C
    DERAEDT, W
    VANROSSUM, M
    BORGHS, G
    [J]. ELECTRONICS LETTERS, 1989, 25 (02) : 136 - 137
  • [8] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS
    YABLONOVITCH, E
    GMITTER, T
    HARBISON, JP
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2222 - 2224