THERMAL-CONDUCTIVITY OF HIGHLY DISORDERED SEMICONDUCTOR ALLOYS

被引：11

作者：

BHANDARI, CM ^{[1
]}

ROWE, DM ^{[1
]}

机构：

[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,WALES

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 05期

关键词：

D O I：

10.1088/0022-3727/10/5/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L59 / L61

页数：3

共 10 条

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[8]

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[9] ELECTRICAL PROPERTIES OF HOT-PRESSED GERMANIUM-SILICON-BORON ALLOYS [J].

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[10] EFFECT OF BOUNDARY SCATTERING ON HIGH-TEMPERATURE THERMAL-CONDUCTIVITY OF SILICON [J].

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