THE NATURE OF NITROGEN-OXYGEN COMPLEXES IN SILICON

被引：65

作者：

SUEZAWA, M ^{[1
]}

SUMINO, K ^{[1
]}

HARADA, H ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO,ANNAKA,GUNMA 37901,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.62

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：62 / 67

页数：6

共 9 条

[1]

Abe T., 1985, VLSI SCI TECHNOLOGY, P543

[2] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[3]

GRAFF K, 1977, SEMICONDUCTOR SILICO, P575

[4]

ITO Y, 1985, APPL PHYS LETT, V47, P488

[5] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[6]

Nakagawa T., 1980, Recent Developments in Statistical Inference and Data Analysis. Proceedings of the International Conference in Statistics, P221

[7]

STEIN HJ, 1984, DEFECTS SEMICONDUCTO, P893

[8] NITROGEN-OXYGEN COMPLEXES AS SHALLOW DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L859-L861

[9] NATURE OF THERMAL DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01) :235-242

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