DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：14

作者：

LIU, DG ^{[1
]}

FAN, JC ^{[1
]}

LEE, CP ^{[1
]}

TSAI, CM ^{[1
]}

CHANG, KH ^{[1
]}

LIOU, DC ^{[1
]}

LEE, TL ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct observation of the Si delta-doped layer in GaAs has been achieved by high resolution transmission electron microscopy. Samples with different Si doses, from half a monolayer to two monolayers, were studied. The observed spreading of the delta-doped layer showed that Si atoms are largely confined in five monolayers at most (in the highest dose case), indicating excellent confinements of dopants in GaAs. From the images, the Si atoms were uniformly distributed in the doped layer, no cluster formation was observed. For delta-doped GaAs grown at low temperature (480-degrees-C), stacking faults originated from the doped layers were observed. These faults were thought to be caused by the large unrelaxed strain in the low-temperature grown GaAs.

引用

页码：2628 / 2630

页数：3

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