RAMAN STUDY OF VIBRATIONAL PROPERTIES OF IMPLANTED SILICON

被引：28

作者：

MORHANGE, JF ^{[1
]}

BESERMAN, R ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, LAB PHYS SOLID, PARIS, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 23卷 / 02期

关键词：

D O I：

10.1002/pssa.2210230206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：383 / 391

页数：9

共 23 条

[1]

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[2]

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[3]

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[4]

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[5]

BRODSKY MH, 1972, INT C SEMICONDUCTORS, P529

[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7]

DELLAMEA G, 1971, PHYS STATUS SOLIDI A, V4, P797, DOI 10.1002/pssa.2210040325

[8] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J].

FLADDA, G ;

BJORKQVIST, K ;

ERIKSSON, L ;

SIGURD, D .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :313-+

[9]

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[10] LOW-FREQUENCY RAMAN SCATTERING IN AMORPHOUS MATERIALS - A-GE, A-INSB, AND A-GE0.5SN0.5 [J].

LANNIN, JS .

SOLID STATE COMMUNICATIONS, 1972, 11 (11) :1523-&

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