OBSERVATION OF RADIATION DEFECTS GENERATED IN EDGE DEFINED FILM FED GROWTH-SILICON RIBBONS UNDER 400 KV IRRADIATION IN THE HIGH-RESOLUTION ELECTRON-MICROSCOPE

被引：4

作者：

KATCKI, J ^{[1
]}

AST, D ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1125 / 1130

页数：6

共 20 条

[1]

Aseev A. L., 1982, Soviet Physics - Solid State, V24, P1163

[2]

BARRY JC, 1987, 45TH P ANN M EMSA, P242

[3] RADIATION-INDUCED ROD-LIKE DEFECTS IN SILICON AND GERMANIUM [J].

BARTSCH, H ;

HOEHL, D ;

KASTNER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :543-551

[4] DEFECTS IN ELECTRON-IRRADIATED GERMANIUM [J].

FERREIRALIMA, CA ;

HOWIE, A .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1057-1071

[5]

GLEICHMANN R, 1985, PHILOS MAG A, V51, P449, DOI 10.1080/01418618508237566

[6] EFFECT OF CARBON ON FORMATION OF ELECTRON-IRRADIATION-INDUCED SECONDARY DEFECTS IN SILICON [J].

HASEBE, M ;

OSHIMA, R ;

FUJITA, FE .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01) :159-160

[7]

HUMPHREYS CJ, 1985, IN SITU EXPT HIGH VO, P433

[8]

KIMERLING LC, 1979, DEFECTS RAD EFFECTS, P56

[9]

KUWABARA M, 1985, IN SITU EXPT HIGH VO, P341

[10] DYNAMIC OBSERVATION OF FORMATION OF DEFECTS IN SILICON UNDER ELECTRON AND PROTON IRRADIATION [J].

MATTHEWS, MD ;

ASHBY, SJ .

PHILOSOPHICAL MAGAZINE, 1973, 27 (06) :1313-1322

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