DEFORMATION POTENTIALS OF THE FUNDAMENTAL EXCITON SPECTRUM OF INP

[11] BOUND EXCITONS AT DOUBLY IONIZABLE ACCEPTORS IN GASB [J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6944 - 6956

[12] EXCITONS BOUND TO NEUTRAL DONORS IN INP [J]. PHYSICAL REVIEW B, 1978, 18 (12) : 7011 - 7021

[13] TURNER WJ, 1964, PHYS REV A-GEN PHYS, V136, P1467

[14] DEPENDENCE OF DIRECT ENERGY-GAP OF GAAS ON HYDROSTATIC-PRESSURE [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5729 - 5738

[15] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1727 - &

[16] EFFECT OF PRESSURE ON INTERBAND REFLECTIVITY SPECTRA OF GERMANIUM AND RELATED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 155 (03): : 703 - &

[11] BOUND EXCITONS AT DOUBLY IONIZABLE ACCEPTORS IN GASB [J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6944 - 6956

[12] EXCITONS BOUND TO NEUTRAL DONORS IN INP [J]. PHYSICAL REVIEW B, 1978, 18 (12) : 7011 - 7021

[13] TURNER WJ, 1964, PHYS REV A-GEN PHYS, V136, P1467

[14] DEPENDENCE OF DIRECT ENERGY-GAP OF GAAS ON HYDROSTATIC-PRESSURE [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5729 - 5738

[15] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1727 - &

[16] EFFECT OF PRESSURE ON INTERBAND REFLECTIVITY SPECTRA OF GERMANIUM AND RELATED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 155 (03): : 703 - &