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EPITAXIAL FE FILMS ON (100)GAAS SUBSTRATES BY ION-BEAM SPUTTERING

被引：34
作者：
TUSTISON, RW
VARITIMOS, T
VANHOOK, J
SCHLOEMANN, EF
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期
关键词：
D O I：
10.1063/1.98474
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：285 / 287
页数：3
相关论文
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KIRSHNASWAMY SV, 1987, IN PRESS 33RD P NAT
[2]   PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY [J].
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JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2596-2599
[3]   MAGNETIC AND STRUCTURAL-PROPERTIES OF HIGH-RATE DUAL ION-BEAM SPUTTERED NIFE FILMS [J].
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ALLEE, D .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3520-3525
[4]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF SINGLE-CRYSTAL FE FILMS ON GAAS [J].
PRINZ, GA ;
KREBS, JJ .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :397-399
[5]  
QUADRI SB, 1985, J VAC SCI TECHNOL B, V3, P718
[6]   GROWTH OF SILICON HOMOEPITAXIAL THIN-FILMS BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION [J].
SCHWEBEL, C ;
MEYER, F ;
GAUTHERIN, G ;
PELLET, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1153-1158
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