GROWTH OF SILICON HOMOEPITAXIAL THIN-FILMS BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION

[1] IMPURITIES IN THIN-FILMS PRODUCED BY ION-BEAM SPUTTERING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L523 - L526

[2] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451

[3] COMPOSITION AND STRESS STATE OF THIN-FILMS DEPOSITED BY ION-BEAM SPUTTERING [J]. VACUUM, 1977, 27 (03) : 109 - 117

[4] ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1197 - &

[5] GAUTHERIN G, 1977, 7TH P INT VAC C 3RD, P1579

[6] GROCE P, 1976, NOUV REV OPT, V7, P121

[7] ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTERED SILICON LAYERS ON SPINEL [J]. THIN SOLID FILMS, 1976, 33 (01) : 29 - 34

[8] KERN W, 1970, RCA REV, V31, P187

[9] MEYER FW, UNPUB

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[1] IMPURITIES IN THIN-FILMS PRODUCED BY ION-BEAM SPUTTERING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L523 - L526

[2] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451

[3] COMPOSITION AND STRESS STATE OF THIN-FILMS DEPOSITED BY ION-BEAM SPUTTERING [J]. VACUUM, 1977, 27 (03) : 109 - 117

[4] ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1197 - &

[5] GAUTHERIN G, 1977, 7TH P INT VAC C 3RD, P1579

[6] GROCE P, 1976, NOUV REV OPT, V7, P121

[7] ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTERED SILICON LAYERS ON SPINEL [J]. THIN SOLID FILMS, 1976, 33 (01) : 29 - 34

[8] KERN W, 1970, RCA REV, V31, P187

[9] MEYER FW, UNPUB

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35