ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTERED SILICON LAYERS ON SPINEL

被引：10

作者：

HINNEBERG, HJ ^{[1
]}

WEIDNER, M ^{[1
]}

HECHT, G ^{[1
]}

WEISSMANTEL, C ^{[1
]}

机构：

[1] TH KARL MARX STAADT,SEKT PHYS ELEKTR BAUELEMENTE,KARL MARX STADT,GER DEM REP

来源：

THIN SOLID FILMS | 1976年 / 33卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90585-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：29 / 34

页数：6

共 14 条

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[7]

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[8] EPITAXIAL FILMS OF SILICON ON SPINEL BY VACUUM EVAPORATION [J].

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[9] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

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[10]

Richter F., 1975, Kristall und Technik, V10, P339, DOI 10.1002/crat.19750100314

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