A PRELIMINARY-STUDY OF GAAS SOLID-STATE DETECTORS FOR HIGH-ENERGY PHYSICS

被引：57

作者：

BERTIN, R

DAURIA, S

DELPAPA, C

FIORI, F

LISOWSKI, B

OSHEA, V

PELFER, PG

SMITH, K

ZICHICHI, A

机构：

[1] IST NAZL FIS NUCL,BOLOGNA,ITALY

[2] CERN,CH-1211 GENEVA 23,SWITZERLAND

[3] UNIV FLORENCE,DEPARTIMENTO FIS,I-50121 FLORENCE,ITALY

[4] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,SCOTLAND

[5] IST NAZL FIS NUCL,FLORENCE,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 294卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(90)91834-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The first phase of a study of GaAs as a base material for solid-state detectors has been completed. The main motivation behind this study is the greater radiation resistance of integrated circuits made of GaAs (compared with Si). Many diodes, of different sizes and shapes but built with the same technique, have been tested electrically and as detectors, using α sources and minimum-ionizing particles. The tests show that these devices work with a full detection effeciency, although there is evidence for trapping of a fraction of the charge produced by the particle inside the semiconductor. © 1990.

引用

页码：211 / 218

页数：8