A STUDY OF SURFACE PASSIVATION ON GAAS AND IN0.53GA0.47AS SCHOTTKY-BARRIER PHOTODIODES USING SIO2, SI3N4 AND POLYIMIDE

被引：17

作者：

LEE, DH

LI, SS

LEE, S

RAMASWAMY, RV

机构：

[1] Univ of Florida, Gainesville, FL,, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

Manuscript received March 29; 1988. This work was supported in part by the RADC under a subcontract with the University of South Florida and in part by DARPA under Grant MDA972-88-J-1006. The authors are with the Department of Electrical Engineering; University of Florida; Gainesville; FL 3261 1. IEEE Log Number 8822524.Manuscript received February 8. 1988; revised June 23. 1988. This work was supported by the Natural Sciences and Engineering Research Council of Canada; Ottawa. F. HCbert was with the Electrical Engineering Department; University of Waterloo; Waterloo; Ontario; Canada; N2L-3GI. He is now with Advanced Bipolar Products. AVANTEK; Inc.; Newark; CA 94560. D. J. Roulston is with the Electrical Engineerins Department; University of Waterloo. Waterloo. Ontario; N2L-3GI. IEEE Log Number 88231 19;

D O I：

10.1109/16.7375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1695 / 1696

页数：2

共 9 条

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