PLASMA ENHANCED CVD SI3N4 FILM APPLIED TO INP AVALANCHE PHOTO-DIODES

被引：25

作者：

SUSA, N

KANBE, H

ANDO, H

OHMACHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 11期

关键词：

D O I：

10.1143/JJAP.19.L675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L675 / L678

页数：4

共 23 条

[1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

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ITO, M ;

KANEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280

[2]

ANDO H, UNPUBLISHED

[3] PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION [J].

DONNELLY, JP ;

ARMIENTO, CA ;

DIADIUK, V ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :74-76

[4] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].

FRITZSCHE, D .

ELECTRONICS LETTERS, 1978, 14 (03) :51-52

[5] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556

[6]

MITO H, 1978, IONICS, V4, P10

[7] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[8] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

NISHIDA, K ;

TAGUCHI, K ;

MATSUMOTO, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[9] INP-LANGMUIR-FILM MIS STRUCTURES [J].

ROBERTS, GG ;

PANDE, KP ;

BARLOW, WA .

ELECTRONICS LETTERS, 1977, 13 (19) :581-583

[10]

ROSLER RS, 1978, SOLID STATE TECH JUN, P601

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