METAL-ION IMPLANTATION - CONVENTIONAL VERSUS IMMERSION

被引:35
作者
BROWN, IG
ANDERS, A
ANDERS, S
DICKINSON, MR
MACGILL, RA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.587353
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vacuum-arc-produced metal plasma can be used as the ion feedstock material in an ion source for doing conventional metal ion implantation. or as the immersing plasma for doing plasma immersion ion implantation. The basic plasma production method is the same in both cases; it is simple and efficient and can be used with a wide range of metals. Vacuum arc ion sources of different kinds have been developed by the authors and others and their suitability as a metal ion implantation tool has been well established. Metal plasma immersion surface processing is an emerging tool whose characteristics and applications are the subject of present research. There are a number of differences between the two techniques, both in the procedures used and in the modified surfaces created. For example, the condensibility of metal plasma results in thin film formation and subsequent energetic implantation is thus done through the deposited layer; in the usual scenario, this recoil implantation and the intermixing it produces is a feature of metal plasma immersion but not of conventional energetic ion implantation. Metal plasma immersion is more suited (but not limited) to higher doses (> 10(17) cm-2) and lower energies (E(i)<tens of keV) than the usual ranges of conventional metal ion implantation. These and other differences provide these vacuum-arc-based surface modification tools with a versatility that enhances the overall technological attractiveness of both.
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收藏
页码:823 / 827
页数:5
相关论文
共 38 条
[1]   METAL PLASMA IMMERSION ION-IMPLANTATION AND DEPOSITION USING VACUUM-ARC PLASMA SOURCES [J].
ANDERS, A ;
ANDERS, S ;
BROWN, IG ;
DICKINSON, MR ;
MACGILL, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :815-820
[2]  
ANDERS A, UNPUB
[3]  
ANDERS S, IN PRESS REV SCI INS
[4]  
ANDERS S, IN PRESS APPL PHYS L
[5]  
BERGMAN C, 1986, ION PLATING IMPLANTA
[6]   T-DYN MONTE-CARLO SIMULATIONS APPLIED TO ION ASSISTED THIN-FILM PROCESSES [J].
BIERSACK, JP ;
BERG, S ;
NENDER, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :21-27
[7]   FAST DEPOSITION OF METALLURGICAL COATINGS AND PRODUCTION OF SURFACE ALLOYS USING A PULSED HIGH-CURRENT VACUUM-ARC [J].
BOXMAN, RL ;
GOLDSMITH, S ;
SHALEV, S ;
YALOZ, H ;
BROSH, N .
THIN SOLID FILMS, 1986, 139 (01) :41-52
[8]   DEVELOPMENT OF A DC, BROAD BEAM, MEVVA ION-SOURCE [J].
BROWN, IG ;
DICKINSON, MR ;
GALVIN, JE ;
MACGILL, RA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04) :2417-2419
[9]   SOME NOVEL SURFACE MODIFICATION APPLICATIONS OF A NEW KIND OF HIGH-CURRENT METAL-ION IMPLANTATION FACILITY [J].
BROWN, IG ;
DICKINSON, MR ;
GALVIN, JE ;
GODECHOT, X ;
MACGILL, RA .
JOURNAL OF MATERIALS ENGINEERING, 1991, 13 (03) :217-228
[10]   VACUUM-ARC ION CHARGE-STATE DISTRIBUTIONS [J].
BROWN, IG ;
GODECHOT, X .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (05) :713-717