NONRESONANT MAGNETOTUNNELING IN ASYMMETRIC GAAS/ALAS DOUBLE-BARRIER STRUCTURES

被引：18

作者：

ZHENG, HZ

YANG, FH

CHEN, ZG

机构：

[1] ACAD SINICA,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

[2] CHINA CTR ADV SCI & TECHNOL,POB 8730,BEIJING 100080,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.42.5270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristic differences in nonresonant magnetotunneling processes measured from a number of asymmetric GaAs/AlAs double-barrier resonant-tunneling structures under two opposite biases have systematically been studied, and ascribed to the different dwell times of traversing electrons in the well as they tunnel in opposite directions. © 1990 The American Physical Society.

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页码：5270 / 5273

页数：4

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