ANOMALOUS BEHAVIOR OF SURFACE LEAKAGE CURRENTS IN HEAVILY-DOPED GATED-DIODES

被引：15

作者：

HURKX, F

PEEK, HL

SLOTBOOM, JW

WINDGASSEN, RA

机构：

[1] Philips Research Laboratories, 5600 JA, Eindhoven

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期

关键词：

D O I：

10.1109/16.249475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The anomalous voltage and doping dependence of surface leakage currents in heavily doped gated diodes is described and explained. By 2D numerical device simulations, using a recombination model which includes trap-assisted tunneling, a good quantitative description of surface leakage currents is obtained. This resulted in a revision of the conventional description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.

引用

收藏

页码：2273 / 2281

页数：9

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