GENERATION CURRENTS FROM INTERFACE STATES IN SELECTIVELY IMPLANTED MOS STRUCTURES

被引：2

作者：

HAWKINS, GA

机构：

[1] Eastman Kodak Co, Rochester, NY, USA, Eastman Kodak Co, Rochester, NY, USA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90127-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / 196

页数：16

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