TEMPERATURE AND DOPING DEPENDENCE OF THE FUNDAMENTAL SURFACE RECOMBINATION VELOCITY

被引：4

作者：

GHANNAM, M

MERTENS, R

DEKEERSMAECKER, R

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90586-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：283 / 285

页数：3

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[9] THE DEPENDENCE OF THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR-CELLS ON EMITTER SURFACE PARAMETERS [J].

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