THE DEPENDENCE OF THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR-CELLS ON EMITTER SURFACE PARAMETERS

被引：6

作者：

NIJS, J

DHOORE, F

MERTENS, R

VANOVERSTRAETEN, R

机构：

来源：

SOLAR CELLS | 1982年 / 6卷 / 04期

关键词：

D O I：

10.1016/0379-6787(82)90077-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：405 / 418

页数：14

共 16 条

[1]

[Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[3] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].

FOSSUM, JG ;

BURGESS, EL .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :238-240

[4] DEGRADATION OF SOLAR-CELL PERFORMANCE BY AREAL INHOMOGENEITY [J].

LINDHOLM, FA ;

MAZER, JA ;

DAVIS, JR ;

ARREOLA, JI .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :967-971

[5] MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICON [J].

MERTENS, RP ;

VANMEERBERGEN, JL ;

NIJS, JF ;

VANOVERSTRAETEN, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :949-955

[6]

Nijs J., 1981, Third E.C. Photovoltaic Solar Energy Conference, P659

[7]

NIJS J, 1980, 2ND P EUR S EUR SPAC

[8] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

NING, TH ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055

[9] RADIOACTIVE AND PHOTOELECTRIC P-N JUNCTION POWER SOURCES [J].

PFANN, WG ;

VANROOSBROECK, W .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (11) :1422-1434

[10] MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES [J].

REDFIELD, D .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :531-533

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