MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES

[1] BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] OPTICAL PROPERTIES OF HEAVILY DOPED COMPENSATED GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1664 - &

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[5] Lindholm F. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P1

[6] LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P123

[7] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[8] CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 772 - 778

[9] PANKOVE JI, 1965, PHYS REV, V140, P2059

[10] POPOVIC RS, UNPUBLISHED

[1] BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] OPTICAL PROPERTIES OF HEAVILY DOPED COMPENSATED GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1664 - &

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[5] Lindholm F. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P1

[6] LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P123

[7] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[8] CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 772 - 778

[9] PANKOVE JI, 1965, PHYS REV, V140, P2059

[10] POPOVIC RS, UNPUBLISHED