MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES

[11] TRANSPORT PROPERTIES OF ELECTRONS IN ENERGY-BAND TAILS [J]. ADVANCES IN PHYSICS, 1975, 24 (04) : 463 - 487

[12] REDFIELD D, 1978, B AM PHYS SOC, V23, P257

[13] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27

[14] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 857 - 862

[15] TAKANO Y, 1973, SEMICONDUCTOR SILICO, P469

[16] THEORY OF BAND STRUCTURE OF VERY DEGENERATE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 126 (02): : 405 - &

[11] TRANSPORT PROPERTIES OF ELECTRONS IN ENERGY-BAND TAILS [J]. ADVANCES IN PHYSICS, 1975, 24 (04) : 463 - 487

[12] REDFIELD D, 1978, B AM PHYS SOC, V23, P257

[13] EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (01) : 25 - 27

[14] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 857 - 862

[15] TAKANO Y, 1973, SEMICONDUCTOR SILICO, P469

[16] THEORY OF BAND STRUCTURE OF VERY DEGENERATE SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 126 (02): : 405 - &