GROWTH OF THIN NIOBIUM CRYSTALS BY THE STRAIN-ANNEAL METHOD

A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thickness ranging between 25 mu m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 10**4 cm** minus **2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.