TEMPERATURE-DEPENDENCE OF ELECTRON SATURATION VELOCITY IN GAAS

被引：7

作者：

ALLAM, R

PRIBETICH, J

机构：

[1] Centre hyperfrequences et Semiconducteurs, Universite des Sciences and Techniques de Lille, UA CNRS no. 287âBatiment P4, Flandres, Artois, Villeneuve d'Ascq

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Gallium arsenide; Semiconductor devices and materials; Thermal conductivity;

D O I：

10.1049/el:19900449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron saturation velocity is determined from the space charge resistance Rc and microwave impedance Zdof GaAs IMPATT diodes under linear conditions. Comparison between experimental measurement and theory is used in a large frequency bandwidth (2-18 GHz) at different temperatures (T≤500K). The results obtained are in good agreement with those of other authors. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：688 / 689

页数：2

共 6 条

[1] ELECTRON-DRIFT VELOCITY VERSUS ELECTRIC-FIELD IN GAAS [J].

CHANG, CS ;

FETTERMAN, HR .

SOLID-STATE ELECTRONICS, 1986, 29 (12) :1295-1296

[2] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].

HOUSTON, PA ;

EVANS, AGR .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :197-204

[3] DETERMINATION OF SATURATED ELECTRON VELOCITY IN GAAS [J].

KRAMER, B ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 26 (11) :623-625

[4] MEASUREMENT OF ELECTRON-DRIFT VELOCITY IN AVALANCHING GAAS DIODES [J].

OKAMOTO, H ;

IKEDA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) :372-374

[5] ELECTRON VELOCITY IN SI AND GAAS AT VERY HIGH ELECTRIC-FIELDS [J].

SMITH, PM ;

INOUE, M ;

FREY, J .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :797-798

[6]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P214

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