MEASUREMENT OF ELECTRON-DRIFT VELOCITY IN AVALANCHING GAAS DIODES

被引：8

作者：

OKAMOTO, H ^{[1
]}

IKEDA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 03期

关键词：

D O I：

10.1109/T-ED.1976.18411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：372 / 374

页数：3

相关论文

共 10 条

[1] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES
DUH, CY
MOLL, JL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +
[2] DOPING PROFILE MEASUREMENTS FROM AVALANCHE SPACE-CHARGE RESISTANCE - NEW TECHNIQUE
GLOVER, GH
TANTRAPORN, W
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 867 - 874
[3] ELECTRON VELOCITY IN NORMAL-GAAS AT HIGH ELECTRIC-FIELDS
HOUSTON, PA
EVANS, AGR
[J]. ELECTRONICS LETTERS, 1974, 10 (16) : 332 - 333
[4] DETERMINATION OF SATURATED ELECTRON VELOCITY IN GAAS
KRAMER, B
MIRCEA, A
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (11) : 623 - 625
[5] NOISE IN IMPATT DIODES - INTRINSIC PROPERTIES
KUVAS, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 220 - +
[6] SWEEP OSCILLATION MODE OF GAAS IMPATT DIODE
OKAMOTO, H
IKEDA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 370 - 372
[7] TRANSPORT PROPERTIES OF GAAS
RUCH, JG
KINO, GS
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +
[8] NONLINEAR PROPERTIES OF IMPATT DEVICES
SCHROEDER, WE
HADDAD, GI
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (02) : 153 - 182
[9] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
STILLMAN, GE
WOLFE, CM
ROSSI, JA
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P214