OPTICAL CHARACTERIZATION OF GAAS QUANTUM WIRE MICROCRYSTALS

被引：28

作者：

MORGAN, GP ^{[1
]}

OGAWA, K ^{[1
]}

HIRUMA, K ^{[1
]}

KAKIBAYASHI, H ^{[1
]}

KATSUYAMA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 03期

关键词：

D O I：

10.1016/0038-1098(91)90188-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical properties of quantum-size GaAs wire crystals grown by organo-metallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1-5-mu-m long and 10-200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.

引用

页码：235 / 238

页数：4

共 21 条

[1] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS
ARAKAWA, Y
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1887 - 1899
[2] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[3] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4714 - 4722
[4] EXCITON BINDING-ENERGY IN A QUANTUM-WELL WIRE
BROWN, JW
SPECTOR, HN
[J]. PHYSICAL REVIEW B, 1987, 35 (06): : 3009 - 3012
[5] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES
CIBERT, J
PETROFF, PM
DOLAN, GJ
PEARTON, SJ
GOSSARD, AC
ENGLISH, JH
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1275 - 1277
[6] (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 824 - 826
[7] DONOR IDENTIFICATION IN BULK GALLIUM-ARSENIDE
HARRIS, TD
SKOLNICK, MS
PARSEY, JM
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 389 - 391
[8] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES
HIRAYAMA, Y
TARUCHA, S
SUZUKI, Y
OKAMOTO, H
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2774 - 2777
[9] HIRUMA K, IN PRESS APPL PHYS L, V59
[10] KATSUYAMA T, 1990, 17 INT C QUANT EL IQ

← 1 2 3 →