PROPERTIES OF RF-SPUTTERED ZINC-OXIDE BASED THIN-FILMS MADE FROM DIFFERENT TARGETS

The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn. ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al2O3 (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380-degrees-C with E(g) = 3.25-3.35 eV and rho = 4.8 X 10(-4) OMEGA cm. Reduction of substrate temperature at 200-degrees-C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al2O3 targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1 X 10(-3) OMEGA cm respectively.