SIMULTANEOUS MEASUREMENT OF THE LINEWIDTH, LINEWIDTH ENHANCEMENT FACTOR-ALPHA, AND FM AND AM RESPONSE OF A SEMICONDUCTOR-LASER

被引:20
作者
KRUGER, U
KRUGER, K
机构
[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH
关键词
D O I
10.1109/50.372471
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using a commercially available computer controlled spectrum analyser with tracking generator, optical input section, and optical delay line it is possible to measure the linewidth, linewidth enhancement factor alpha, and FM and AM response of a semiconductor laser in one process, The determination of the linewidth yields also information about the frequency noise density and the determination of alpha delivers information about the nonlinear gain, Assuming an optical input power of 0 dBm, a laser linewidth < 50 MHz and a modulation response of the laser without cut-off, AM indices m > 0.01% and FM deviations of about > 10 MHz up to 20 GHz can be detected.
引用
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页码:592 / 597
页数:6
相关论文
共 9 条
[1]   MEASUREMENT OF THE SWEPT-FREQUENCY CARRIER-INDUCED FM RESPONSE OF A SEMICONDUCTOR-LASER USING AN INCOHERENT INTERFEROMETRIC-TECHNIQUE [J].
BANEY, DM ;
GALLION, PB ;
CHABRAN, C .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (05) :325-327
[2]   OBSERVATION OF HIGHLY NONDEGENERATE 4-WAVE-MIXING IN 1.5 MU-M TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS AND ESTIMATION OF NONLINEAR GAIN COEFFICIENT [J].
KIKUCHI, K ;
KAKUI, M ;
ZAH, CE ;
LEE, TP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) :151-156
[3]   DEPENDENCE OF THE LINEWIDTH OF A SEMICONDUCTOR-LASER ON THE MODE DISTRIBUTION [J].
KRUGER, U ;
PETERMANN, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (12) :2058-2064
[4]   NOVEL METHOD FOR HIGH-RESOLUTION MEASUREMENT OF LASER OUTPUT SPECTRUM [J].
OKOSHI, T ;
KIKUCHI, K ;
NAKAYAMA, A .
ELECTRONICS LETTERS, 1980, 16 (16) :630-631
[5]   THE INFLUENCE OF RESONATOR STRUCTURE ON THE LINEWIDTH ENHANCEMENT FACTOR OF SEMICONDUCTOR-LASERS [J].
OLOFSSON, L ;
BROWN, TG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (06) :1450-1458
[6]   SEMICONDUCTOR-LASER LINEWIDTH BROADENING DUE TO 1/F CARRIER NOISE [J].
OMAHONY, MJ ;
HENNING, ID .
ELECTRONICS LETTERS, 1983, 19 (23) :1000-1001
[7]  
PETERMANN K, 1988, ADV OPTOELECTRONICS, pCH7
[8]   MEASUREMENT OF DIRECT FREQUENCY-MODULATION CHARACTERISTICS OF DFB-LD BY DELAYED SELF-HOMODYNE TECHNIQUE [J].
RYU, S ;
YAMAMOTO, S .
ELECTRONICS LETTERS, 1986, 22 (20) :1052-1054
[9]   CHARACTERIZATION OF FREQUENCY-RESPONSE OF 1.5-MU-M INGAASP DFB LASER DIODE AND INGAAS PIN PHOTODIODE BY HETERODYNE MEASUREMENT TECHNIQUE [J].
SCHIMPE, R ;
BOWERS, JE ;
KOCH, TL .
ELECTRONICS LETTERS, 1986, 22 (09) :453-454