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PRESSURE MEASUREMENT BY GAAS PIEZOELECTRIC SENSORS
被引:14
作者
:
FRICKE, K
论文数:
0
引用数:
0
h-index:
0
机构:
Technische Hochscule Darmstat, Institut für Hochfrequenztechnik, Darmstadt, Merckstr
FRICKE, K
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Technische Hochscule Darmstat, Institut für Hochfrequenztechnik, Darmstadt, Merckstr
HARTNAGEL, HL
机构
:
[1]
Technische Hochscule Darmstat, Institut für Hochfrequenztechnik, Darmstadt, Merckstr
来源
:
ELECTRONICS LETTERS
|
1990年
/ 26卷
/ 11期
关键词
:
Gallium arsenide;
Piezoelectric transducers;
Semiconductor devices and materials;
D O I
:
10.1049/el:19900452
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
A new pressure sensor for pressures up to 100 bar and temperatures of about 200°C is presented. It uses the piezoelectric effect of 111 oriented semi-insulating GaAs. This material allows the monolithic integration of sensor and electronic circuit. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:693 / 694
页数:2
相关论文
共 4 条
[1]
GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
ADACHI, S
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(03)
: R1
-
R29
[2]
A NEW GAAS TECHNOLOGY FOR STABLE FETS AT 300-DEGREES-C
FRICKE, K
论文数:
0
引用数:
0
h-index:
0
FRICKE, K
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
SCHUTZ, R
论文数:
0
引用数:
0
h-index:
0
SCHUTZ, R
SCHWEEGER, G
论文数:
0
引用数:
0
h-index:
0
SCHWEEGER, G
WURFL, J
论文数:
0
引用数:
0
h-index:
0
WURFL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1989,
10
(12)
: 577
-
579
[3]
HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161
[4]
MONOLITHIC GAAS MULTIVIBRATOR FOR OPERATION AT TEMPERATURES UP TO 300-DEGREES-C
SCHWEEGER, G
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
SCHWEEGER, G
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
SINGH, JK
FRICKE, K
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
FRICKE, K
KLINGELHOFER, C
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
KLINGELHOFER, C
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
HARTNAGEL, HL
[J].
ELECTRONICS LETTERS,
1989,
25
(20)
: 1385
-
1386
←
1
→
共 4 条
[1]
GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
ADACHI, S
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(03)
: R1
-
R29
[2]
A NEW GAAS TECHNOLOGY FOR STABLE FETS AT 300-DEGREES-C
FRICKE, K
论文数:
0
引用数:
0
h-index:
0
FRICKE, K
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
SCHUTZ, R
论文数:
0
引用数:
0
h-index:
0
SCHUTZ, R
SCHWEEGER, G
论文数:
0
引用数:
0
h-index:
0
SCHWEEGER, G
WURFL, J
论文数:
0
引用数:
0
h-index:
0
WURFL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1989,
10
(12)
: 577
-
579
[3]
HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161
[4]
MONOLITHIC GAAS MULTIVIBRATOR FOR OPERATION AT TEMPERATURES UP TO 300-DEGREES-C
SCHWEEGER, G
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
SCHWEEGER, G
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
SINGH, JK
FRICKE, K
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
FRICKE, K
KLINGELHOFER, C
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
KLINGELHOFER, C
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA
HARTNAGEL, HL
[J].
ELECTRONICS LETTERS,
1989,
25
(20)
: 1385
-
1386
←
1
→