PRESSURE MEASUREMENT BY GAAS PIEZOELECTRIC SENSORS

被引:14
作者
FRICKE, K
HARTNAGEL, HL
机构
[1] Technische Hochscule Darmstat, Institut für Hochfrequenztechnik, Darmstadt, Merckstr
关键词
Gallium arsenide; Piezoelectric transducers; Semiconductor devices and materials;
D O I
10.1049/el:19900452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new pressure sensor for pressures up to 100 bar and temperatures of about 200°C is presented. It uses the piezoelectric effect of 111 oriented semi-insulating GaAs. This material allows the monolithic integration of sensor and electronic circuit. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:693 / 694
页数:2
相关论文
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