MODULATED SPECTROSCOPY OF ZINCBLENDE SEMICONDUCTORS - CALCULATION OF PIEZOMODULATION PARAMETERS FOR INDIRECT SEMICONDUCTORS

被引：6

作者：

MATHIEU, H

AUVERGNE, D

MERLE, P

机构：

[1] CNRS,CTR ETUD ELECTR SOLIDES,34060 MONTPELLIER,FRANCE

[2] UNIV SCI & TECH LANGUEDOC,34060 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 72卷 / 02期

关键词：

D O I：

10.1002/pssb.2220720218

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：609 / 616

页数：8

共 20 条

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[6]

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[8] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].

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[9]

ELLIOTT RJ, 1957, PHYS REV, V108, P1374

[10] PIEZOTRANSMISSION MEASUREMENTS OF PHONON-ASSISTED TRANSITIONS IN SEMICONDUCTORS .I. GERMANIUM [J].

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