AVERAGE ENERGY TO FORM ELECTRON-HOLE PAIRS IN GAP DIODES WITH ALPHA-PARTICLES

被引：31

作者：

KOBAYASHI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期

关键词：

D O I：

10.1063/1.1654321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：150 / +

页数：1

共 9 条

[1] CADMIUM TELLURIDE SURFACE BARRIER DETECTORS [J].

CORNET, A ;

SIFFERT, P ;

COCHE, A ;

TRIBOULE.R .

APPLIED PHYSICS LETTERS, 1970, 17 (10) :432-&

[2] ELECTRON-HOLE PAIR CREATION IN GALLIUM PHOSPHIDE BY ALPHA PARTICLES [J].

GOLDSTEI.B .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3853-&

[3] PROPERTIES OF GAP RED-EMITTING DIODES GROWN BY LIQUID-PHASE EPITAXY .3. EFFECT OF HOLDING TIME AT GROWTH TEMPERATURE [J].

KASAMI, A ;

NAITO, M ;

TOYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) :117-&

[4] PERFORMANCE OF GAAS SURFACE-BARRIER DETECTORS MADE FROM HIGH-PURITY GALLIUM-ARSENIDE [J].

KOBAYASHI, T ;

KOYAMA, M ;

SUGITA, T ;

TAKAYANAGI, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) :324-+

[5] PROPERTIES OF GAP RED-EMITTING DIODES GROWN BY LIQUID-PHASE EPITAXY .2. EFFECT OF SUBSTRATE ORIENTATION [J].

NAITO, M ;

KASAMI, A ;

TOYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) :109-&

[6] ACCURATE DETERMINATION OF IONIZATION ENERGY IN SEMICONDUCTOR DETECTORS [J].

PEHL, RH ;

GOULDING, FS ;

LANDIS, DA ;

LENZLING.M .

NUCLEAR INSTRUMENTS & METHODS, 1968, 59 (01) :45-&

[7]

TAUC J, 1959, CZECH J PHYS, V9, P59

[8] GREEN AND RED ELECTROLUMINESCENCES FROM DIFFUSED GALLIUM PHOSPHIDE P-N JUNCTIONS [J].

TOYAMA, M ;

MAEDA, K ;

SEKIWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) :468-&

[9] PRIMARY PHOTOCURRENT IN CADMIUM SULFIDE [J].

VANHEERDEN, PJ .

PHYSICAL REVIEW, 1957, 106 (03) :468-473

← 1 →