PERFORMANCE OF GAAS SURFACE-BARRIER DETECTORS MADE FROM HIGH-PURITY GALLIUM-ARSENIDE

被引：38

作者：

KOBAYASHI, T

KOYAMA, M

SUGITA, T

TAKAYANAGI, S

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 03期

关键词：

D O I：

10.1109/TNS.1972.4326745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：324 / +

页数：1

相关论文

共 32 条

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[5] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS
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[7] HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL N-GAAS
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[8] ELECTRON-HOLE PAIR CREATION IN GALLIUM PHOSPHIDE BY ALPHA PARTICLES
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[10] GALLIUM ARSENIDE FOR GAMMA-RAY SPECTROSCOPY
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