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STRAIN-RELAXED INGAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY FOR 1.3 MU-M FABRY-PEROT OPTICAL MODULATORS

被引：6
作者：
HAMMONS, BE
FRITZ, IJ
BRENNAN, TM
HOWARD, AJ
OLSEN, JA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期
关键词：
D O I：
10.1116/1.586743
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of various growth temperatures on molecular-beam epitaxially grown, compositionally graded, In0.33Ga0.67As buffers and 1.33 mum optoelectronic device structures were investigated. Buffer structures grown at 400-degrees-C on GaAs substrates showed > 99.5% lattice relaxation with minimal threading dislocation content. Multiple quantum well superlattices grown at 400-degrees-C upon this buffer exhibited strong excitonic absorption at 1.33 mum and good surface morphology with slight crosshatching. A Fabry-Perot-cavity reflectance modulator grown at 400-degrees-C on this buffer exhibited strong excitonic absorption and good reflectance contrast at 1.33 mum.
引用
收藏
页码：932 / 934
页数：3
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