FOWLER-NORDHEIM TUNNELING IN SIO2 FILMS

被引：27

作者：

SNOW, EH

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(67)90715-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：813 / &

共 7 条

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SNOW, EH ;

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DEAL, BE ;

GROVE, AS .

[3]

GOOD RH, 1956, HDB PHYSIK, V21, P188

[4] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

[5] TUNNELING FROM METAL TO SEMICONDUCTORS [J].

GRAY, PV .

PHYSICAL REVIEW, 1965, 140 (1A) :A179-+

LEWICKI, G ;

MEAD, CA .

[7] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J].

WILLIAMS, R .

PHYSICAL REVIEW, 1965, 140 (2A) :A569-&