PREPARATION OF HIGH-PURITY INP BY THE SYNTHESIS, SOLUTE DIFFUSION TECHNIQUE

被引：21

作者：

KUBOTA, E

SUGII, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.329040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2983 / 2986

页数：4

共 25 条

[11] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J].

KANEKO, K ;

AYABE, M ;

DOSEN, M ;

MORIZANE, K ;

USUI, S ;

WATANABE, N .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :884-890

[12]

KAWAKAMI T, 1979, ELECTRON LETT, V15, P743, DOI 10.1049/el:19790542

[13]

LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7

[14] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[15]

MARSHALL AJ, 1978, J CRYST GROWTH, V44, P651

[16]

Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

[17] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING [J].

NYGREN, SF ;

RINGEL, CM ;

VERLEUR, HW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :306-&

[18]

ROSZTOCZY FE, 1968, J ELECTROCHEM SOC, V115, pC244

[19] EUTECTIC FORMATION IN CHROMIUM-DOPED INDIUM-PHOSPHIDE [J].

STRAUGHA.BW ;

HURLE, DTJ ;

LLOYD, K ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :117-124

[20] LARGE-SIZED INP SINGLE-CRYSTALS BY THE SYNTHESIS, SOLUTE DIFFUSION TECHNIQUE [J].

SUGII, K ;

KUBOTA, E ;

IWASAKI, H .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) :289-292

← 1 2 3 →