ELECTRICAL-ACTIVITY OF GRAIN-BOUNDARIES IN SHAPED GROWN SILICON

Structure (by SEM, X‐ray, profilometry), recombination activity (by EBIC), and carrier transport properties (by conductivity, Hall effect, mobility of carriers) are investigated in boron doped hexahedral thin‐walled crystals of silicon, grown by the EFG‐process (modification of Stepanov method). All grain boundaries (GBs) can be divided into special (Σ 3, 9), near coincidence and highly deviated (Σ 3, 9, 13), and general (nonspecial) GBs. Special GBs are inactive relative to both, minority and majority carriers. Near coincidence GBs are active to minority, but inactive to majority carriers. General GBs and highly deviated ones from special orientations are very active to both, minority and majority carriers. Representative classification of GBs activity is explained on the basis of the qualitative phenomenological model suggested. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA