INFLUENCE OF CHEMICAL ETCHING ON METAL CONTACTS TO II-VI COMPOUNDS - CDTE AND ZNSE

被引:7
作者
DHARMADASA, IM [1 ]
BLOMFIELD, CJ [1 ]
GREGORY, GE [1 ]
YOUNG, J [1 ]
机构
[1] SHEFFIELD HALLAM UNIV,MAT RES INST,SHEFFIELD S1 1WB,ENGLAND
关键词
D O I
10.1080/00207219408926005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The chemical nature of CdTe and ZnSe surfaces prepared by various chemical treatments has been studied by X-ray photoelectron spectroscopy. It has been found that the stoichiometry of the surfaces is very sensitive to the chemical treatments and each surface shows a similar pattern. In general bromine-containing or acid-based solutions preferentially remove the semiconductor cation, leaving a semiconductor anion-rich surface. In contrast, alkaline-based systems preferentially remove the semiconductor anion to produce a semiconductor cation-rich surface. Metal contacts fabricated on these surfaces show considerable differences in current-transport properties. The stability of these metal-semiconductor contacts has also been investigated and the microscopic interactions at these interfaces studied with Auger depth profiling and secondary-ion mass spectroscopy surface imaging techniques. The influence of microscopic interactions on the macroscopic electrical properties is presented and discussed in detail.
引用
收藏
页码:961 / 967
页数:7
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