CADMIUM ARSENIDE FILMS PREPARED BY PULSED LASER EVAPORATION - ELECTRICAL-PROPERTIES AND LATTICE-PARAMETERS

被引：7

作者：

DUBOWSKI, JJ ^{[1
]}

NORMAN, P ^{[1
]}

SEWELL, PB ^{[1
]}

WILLIAMS, DF ^{[1
]}

KROLICKI, F ^{[1
]}

LEWICKI, M ^{[1
]}

机构：

[1] WROCLAW TECH UNIV,INST INORGAN CHEM & MET RARE ELEMENTS,PL-50370 WROCLAW,POLAND

来源：

THIN SOLID FILMS | 1987年 / 147卷 / 01期

关键词：

D O I：

10.1016/0040-6090(87)90047-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L51 / L54

页数：4

共 11 条

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[5] GROWTH AND PROPERTIES OF CD3AS2 FILMS PREPARED BY PULSED-LASER EVAPORATION [J].

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OPTICS COMMUNICATIONS, 1983, 48 (04) :229-232

[7] DYNAMICS OF LASER-INDUCED VAPORIZATION FOR ULTRAFAST DEPOSITION OF AMORPHOUS-SILICON FILMS [J].

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[8]

MIOTKOWSKA S, 1942, J CRYST GROWTH, V48, P387

[9] HIGHLY ORIENTED ZNO FILMS GROWN BY LASER EVAPORATION [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1806-1809

[10]

ZDANOWICZ W, 1964, B ACAD POL SCI-CHIM, V12, P169

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