GROWTH AND PROPERTIES OF CD3AS2 FILMS PREPARED BY PULSED-LASER EVAPORATION

Pulsed-laser evaporation has been used to prepare films of Cd//3As//2. It is found that the electrical quality of the prepared films improves markedly as the substrate temperature is increased from 295 to 433 K. The films deposited at about 430 K are highly oriented, with electrical characteristics approaching those of the bulk material. Electron mobilities reach values of 6. 05 multiplied by 10**3 cm**2/V multiplied by (times) s at 300 K (i. e. , comparable to bulk mobilities) and 9 multiplied by 10**3 cm**2/V multiplied by (times) s at 10 K (which is within a factor of two of those for the bulk material). Further increases in the substrate-deposition temperature give rise to films that are arsenic deficient.