FILMS FROM THE LOW-TEMPERATURE OXIDATION OF SILANE

被引：49

作者：

TAFT, EA

机构：

[1] General Electric Corporate Research and Development Center, Schenectady

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 10期

关键词：

CVD; dielectric; infrared; polymerization;

D O I：

10.1149/1.2128786

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Oxygen-silane concentrations in nitrogen for the deposition of films on substrates hald at 130°-320°C have been determined for a standard horizontal reactor. The over-all growth rate curve is consistent with a branching chain reaction at these temperatures. The infrared absorption spectra show increasing hydrogen content of the films as the reaction temperature is reduced. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1728 / 1731

页数：4

共 10 条

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