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OPTICAL INVESTIGATION OF CHARGE ACCUMULATION AND BISTABILITY IN AN ASYMMETRIC DOUBLE BARRIER RESONANT TUNNELING HETEROSTRUCTURE
被引:10
作者
:
HAYES, DG
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
HAYES, DG
SKOLNICK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
SKOLNICK, MS
SIMMONDS, PE
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
SIMMONDS, PE
EAVES, L
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
EAVES, L
HALLIDAY, DP
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
HALLIDAY, DP
LEADBEATER, ML
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
LEADBEATER, ML
HENINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
HENINI, M
HUGHES, OH
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
HUGHES, OH
HILL, G
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
HILL, G
PATE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
PATE, MA
机构
:
[1]
ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND
[2]
UNIV WOLLONGONG,DEPT PHYS,WOLLONGONG,NSW 2500,AUSTRALIA
[3]
UNIV SHEFFIELD,DEPT ELECT & ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
来源
:
SURFACE SCIENCE
|
1990年
/ 228卷
/ 1-3期
关键词
:
D O I
:
10.1016/0039-6028(90)90331-2
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
A photoluminescence study of an asymmetric double barrier resonant tunneling structure, exhibiting intrinsic bistability, is reported. The variation of PL linewidth with bias provides a direct signature of the charge build-up in the well which occurs during resonant tunneling. Accurate values of the charge density are deduced from the Landau level filling in PL spectra taken as a function of magnetic field. © 1990.
引用
收藏
页码:373 / 377
页数:5
相关论文
共 17 条
[1]
OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES
[J].
ALVES, ES
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
ALVES, ES
;
EAVES, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
EAVES, L
;
HENINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HENINI, M
;
HUGHES, OH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HUGHES, OH
;
LEADBEATER, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
LEADBEATER, ML
;
SHEARD, FW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
SHEARD, FW
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TOOMBS, GA
论文数:
0
引用数:
0
h-index:
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机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
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UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HILL, G
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PATE, MA
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引用数:
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h-index:
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UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
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MANY-BODY EFFECTS IN A MODULATION-DOPED SEMICONDUCTOR QUANTUM-WELL
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DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DELALANDE, C
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BASTARD, G
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引用数:
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机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
BASTARD, G
;
ORGONASI, J
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
ORGONASI, J
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BRUM, JA
论文数:
0
引用数:
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h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
BRUM, JA
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LIU, HW
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DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
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VOOS, M
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→
共 17 条
[1]
OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES
[J].
ALVES, ES
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
ALVES, ES
;
EAVES, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
EAVES, L
;
HENINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HENINI, M
;
HUGHES, OH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HUGHES, OH
;
LEADBEATER, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
LEADBEATER, ML
;
SHEARD, FW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
SHEARD, FW
;
TOOMBS, GA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
TOOMBS, GA
;
HILL, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
HILL, G
;
PATE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
PATE, MA
.
ELECTRONICS LETTERS,
1988,
24
(18)
:1190
-1191
[2]
MANY-BODY EFFECTS IN A MODULATION-DOPED SEMICONDUCTOR QUANTUM-WELL
[J].
DELALANDE, C
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DELALANDE, C
;
BASTARD, G
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
BASTARD, G
;
ORGONASI, J
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
ORGONASI, J
;
BRUM, JA
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
BRUM, JA
;
LIU, HW
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
LIU, HW
;
VOOS, M
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
VOOS, M
;
WEIMANN, G
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
WEIMANN, G
;
SCHLAPP, W
论文数:
0
引用数:
0
h-index:
0
机构:
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
DEUTSCH BUNDEPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
SCHLAPP, W
.
PHYSICAL REVIEW LETTERS,
1987,
59
(23)
:2690
-2692
[3]
OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY
[J].
GOLDMAN, VJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
GOLDMAN, VJ
;
TSUI, DC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
TSUI, DC
;
CUNNINGHAM, JE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
CUNNINGHAM, JE
.
PHYSICAL REVIEW LETTERS,
1987,
59
(14)
:1623
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